IPW60R190P6FKSA1N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3
1:$2.0510
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ABRmicro #.ABR2045-IPW60R-1007601
ManufacturerInfineon Technologies
MPN #.IPW60R190P6FKSA1
Estimated Lead Time15 Weeks
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Datasheet
IPW60R190P6(PDF)
IPW60R190P6(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Unit Price$ 2.0510
Ext. Price$ 2.0510
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Price Gradients
Qty.Unit PriceExt. Price
1$2.0510$2.0510
30$1.6280$48.8330
120$1.3950$167.4080
510$1.3640$695.7680
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ P6
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPW60R190
Continuous Drain Current (ID) @ 25°C20.2A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1750 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation151W (Tc)
RDS(on) Drain-to-Source On Resistance190mOhm @ 7.6A, 10V
Package Type (Mfr.)PG-TO247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 630µ
Package / CaseTO-247-3
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPW60R190P6FKSA1 is an N-Channel MOSFET produced by Infineon Technologies, designed for high voltage applications. It operates at a maximum voltage of 600 V with a current rating of 20.2 A and is capable of dissipating up to 151 W in its Through Hole PG-TO247-3 package. The MOSFET features a gate charge of 11 nC at 10 V and an input capacitance of 1750 pF at 100 V, making it suitable for managing power efficiently in high-demand environments. Its design emphasizes reliability and efficiency under high thermal and electrical stress conditions.
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