IPW60R125P6XKSA1N-Channel 600 V 30A (Tc) 219W (Tc) Through Hole PG-TO247-3
1:$3.4170
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ABRmicro #.ABR2045-IPW60R-938012
ManufacturerInfineon Technologies
MPN #.IPW60R125P6XKSA1
Estimated Lead Time15 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 3.4170
Ext. Price$ 3.4170
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
30$3.4170$102.5100
90$2.9280$263.5430
300$2.7660$829.7060
750$2.6030$1952.3440
1500$2.2290$3343.6880
3000$2.1000$6298.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ P6
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPW60R125
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2660 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation219W (Tc)
RDS(on) Drain-to-Source On Resistance125mOhm @ 11.6A, 10V
Package Type (Mfr.)PG-TO247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 960µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPW60R125P6XKSA1 is a robust power MOSFET manufactured by Infineon Technologies, designed for high-efficiency performance in power management systems. This N-Channel MOSFET features a drain-source voltage rating of 600V and a continuous drain current of 30A at a case temperature (Tc), with a substantial power dissipation capacity of 219W. Encased in a PG-TO247-3 through-hole package, it facilitates efficient thermal management and easy integration into electronic circuits. Additionally, it offers a gate charge of 56 nC at 10V and a typical input capacitance of 2660 pF at 100V, ensuring optimized switching performance.
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