IPW60R040C7XKSA1N-Channel 600 V 50A (Tc) 227W (Tc) Through Hole PG-TO247-3
1:$9.5160
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ABRmicro #.ABR2045-IPW60R-979773
ManufacturerInfineon Technologies
MPN #.IPW60R040C7XKSA1
Estimated Lead Time17 Weeks
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Datasheet
IPW60R040C7(PDF)
IPW60R040C7(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 9.5160
Ext. Price$ 9.5160
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$9.5160$9.5160
30$7.5960$227.8740
120$6.7960$815.4900
510$5.9970$3058.3430
1020$5.3960$5504.3660
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ C7
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPW60R040
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)107 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4340 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation227W (Tc)
RDS(on) Drain-to-Source On Resistance40mOhm @ 24.9A, 10V
Package Type (Mfr.)PG-TO247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1.24mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPW60R040C7XKSA1 is a semiconductor device manufactured by Infineon Technologies, specifically designed as an N-Channel MOSFET. It has a voltage rating of 600 V and a current rating of 50A at the case temperature (Tc), while it can dissipate up to 227W under the same conditions. The component comes in a PG-TO247-3 through-hole package. It features an on-resistance of 40 milliohms at a current of 24.9A and a gate voltage of 10V, with a total gate charge of 107 nanocoulombs at the same gate voltage, making it suitable for efficient high-power switching applications.
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