IPW60R031CFD7XKSA1N-Channel 650 V 63A (Tc) 278W (Tc) Through Hole PG-TO247-3
1:$9.2070
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ABRmicro #.ABR2045-IPW60R-995645
ManufacturerInfineon Technologies
MPN #.IPW60R031CFD7XKSA1
Estimated Lead Time20 Weeks
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Datasheet
IPW60R031CFD7(PDF)
IPW60R031CFD7(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 9.2070
Ext. Price$ 9.2070
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$9.2070$9.2070
30$7.3460$220.3840
120$6.5740$788.8430
510$5.8000$2958.0960
1020$5.2200$5324.4640
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ CFD7
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPW60R031
Continuous Drain Current (ID) @ 25°C63A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)141 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5623 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation278W (Tc)
RDS(on) Drain-to-Source On Resistance31mOhm @ 32.6A, 10V
Package Type (Mfr.)PG-TO247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1.63mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPW60R031CFD7XKSA1 is a high-performance N-channel MOSFET manufactured by Infineon Technologies. It is designed to withstand a maximum voltage of 650 V and can handle a continuous current of up to 63A when at thermal equilibrium. With its relatively low on-state resistance of 31 mOhms at 32.6A and 10V, it exhibits efficient electrical conductivity. The MOSFET's maximum power dissipation capability is rated at 278W under specified thermal conditions. It features a gate-source voltage tolerance of ±20V and has a total gate charge of 5623 pF at 400V. The device comes in a PG-TO247-3 through-hole package, suitable for high-power applications requiring reliable performance and heat dissipation.
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