IPW50R280CEFKSA1N-Channel 500 V 13A (Tc) 92W (Tc) Through Hole PG-TO247-3-1
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ABRmicro #.ABR2045-IPW50R-996417
ManufacturerInfineon Technologies
MPN #.IPW50R280CEFKSA1
Estimated Lead Time-
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Datasheet
500V CoolMOS CE Brief(PDF)
500V CoolMOS CE Brief(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPW50R
Continuous Drain Current (ID) @ 25°C13A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))13V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)773 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation92W (Tc)
RDS(on) Drain-to-Source On Resistance280mOhm @ 4.2A, 13V
Package Type (Mfr.)PG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 350µA
Package / CaseTO-247-3
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Datasheets
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Infineon Technologies IPW50R280CEFKSA1 is an N-Channel MOSFET designed for high-voltage and high-current applications. It features a maximum voltage rating of 500 V and a current capacity of 13A at the case (Tc), providing a power dissipation of 92W under the same conditions. The transistor is housed in a PG-TO247-3-1 package, making it suitable for through-hole mounting. It exhibits a gate charge of 32.6 nC when a gate-to-source voltage of 10 V is applied, with a gate threshold voltage of 13V. This MOSFET is engineered to offer efficient and reliable performance in a compact form factor.
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