IPU95R750P7AKMA1N-Channel 950 V 9A (Tc) 73W (Tc) Through Hole PG-TO251-3
1:$1.2050
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPU95R-999802
ManufacturerInfineon Technologies
MPN #.IPU95R750P7AKMA1
Estimated Lead Time17 Weeks
SampleGet Free Sample
Datasheet
IPU95R750P7(PDF)
IPU95R750P7(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2050
Ext. Price$ 1.2050
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
75$1.2050$90.3660
150$0.9910$148.6970
375$0.9660$362.1800
525$0.8380$440.1140
1875$0.7110$1332.7730
3750$0.6760$2534.0630
7500$0.6500$4876.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ P7
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPU95R750
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)950 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)712 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation73W (Tc)
RDS(on) Drain-to-Source On Resistance750mOhm @ 4.5A, 10V
Package Type (Mfr.)PG-TO251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 220µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPU95R750P7AKMA1 is an N-channel power MOSFET manufactured by Infineon Technologies, designed to handle applications requiring high voltage and current handling capabilities. It features a voltage rating of 950 V and a current capacity of 9A under thermal management conditions (Tc). The device is housed in a compact PG-TO251-3 through-hole package and is capable of power dissipation up to 73W (Tc). Its notable electrical characteristics include a gate charge of 23 nC at 10 V and an output capacitance of 712 pF at 400 V. Additionally, it has a low on-resistance of 750 mΩ when conducting 4.5A at a gate-source voltage of 10V, making it efficient for switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.