IPU80R3K3P7AKMA1N-Channel 800 V 1.9A (Tc) 18W (Tc) Through Hole PG-TO251-3
1:$0.2960
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ABRmicro #.ABR2045-IPU80R-989815
ManufacturerInfineon Technologies
MPN #.IPU80R3K3P7AKMA1
Estimated Lead Time-
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Datasheet
IPU80R3K3P7(PDF)
IPU80R3K3P7(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.2960
Ext. Price$ 0.2960
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Price Gradients
Qty.Unit PriceExt. Price
1500$0.2960$444.6560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ P7
Packaging
Tube
Lifecycle StatusEnd of Life (EOL)
Base Product NumberIPU80R3
Continuous Drain Current (ID) @ 25°C1.9A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)5.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)120 pF @ 500 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation18W (Tc)
RDS(on) Drain-to-Source On Resistance3.3Ohm @ 590mA, 10V
Package Type (Mfr.)PG-TO251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 30µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPU80R3K3P7AKMA1 is a power MOSFET manufactured by Infineon Technologies. It is designed as an N-Channel device capable of handling a maximum voltage of 800 V and a current of 1.9A under specified conditions. Encased in a PG-TO251-3 through-hole package, it exhibits a power dissipation of 18 watts under maximum thermal conditions, and it has an on-state resistance of 3.3 ohms when operating at 590 mA with a gate source voltage of 10V. Additionally, this MOSFET features an input capacitance of 120 pF at 500 V.
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