IPU80R1K0CEBKMA1N-Channel 800 V 5.7A (Tc) 83W (Tc) Through Hole PG-TO251-3
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ABRmicro #.ABR2045-IPU80R-915863
ManufacturerInfineon Technologies
MPN #.IPU80R1K0CEBKMA1
Estimated Lead Time-
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Datasheet
IPx80R1K0CE(PDF)
IPx80R1K0CE(PDF)
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Packaging
Tube
Shipping DateNovember 10, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIPU80R
Continuous Drain Current (ID) @ 25°C5.7A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)785 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance950mOhm @ 3.6A, 10V
Package Type (Mfr.)PG-TO251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)