IPU50R3K0CEAKMA1N-Channel 500 V 1.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
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ABRmicro #.ABR2045-IPU50R-1007762
ManufacturerInfineon Technologies
MPN #.IPU50R3K0CEAKMA1
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Datasheet
IPX50R3K0CE(PDF)
IPX50R3K0CE(PDF)
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Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ CE
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIPU50R
Continuous Drain Current (ID) @ 25°C1.7A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))13V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)4.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)84 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation26W (Tc)
RDS(on) Drain-to-Source On Resistance3Ohm @ 400mA, 13V
Package Type (Mfr.)PG-TO251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 30µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPU50R3K0CEAKMA1 is a semiconductor component manufactured by Infineon Technologies. It is an N-Channel MOSFET with a maximum voltage rating of 500 V and a continuous current rating of 1.7 A at case temperature (Tc), offering a power dissipation of 26 W under the same conditions. This device is designed for through-hole mounting and comes in a PG-TO251-3 package. It features a gate-source voltage withstand of ±20V and possesses an input capacitance of 84 pF at 100 V, with a gate threshold voltage of 13V. These specifications make it suitable for applications requiring efficient power handling and switching capabilities.
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