IPU06N03LAGXKN-Channel 25 V 50A (Tc) 83W (Tc) Through Hole P-TO251-3-1
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ABRmicro #.ABR2045-IPU06N-1003648
ManufacturerInfineon Technologies
MPN #.IPU06N03LAGXK
Estimated Lead Time-
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Datasheet
IP(D,F,S,U)06N03LA G(PDF)
IP(D,F,S,U)06N03LA G(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPU06N
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2653 pF @ 15 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance5.9mOhm @ 30A, 10V
Package Type (Mfr.)P-TO251-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 40µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part number IPU06N03LAGXK from Infineon Technologies is an N-Channel MOSFET transistor with a maximum voltage rating of 25 V and a current rating of 50 A under specified conditions. It is housed in a P-TO251-3-1 package, suitable for through-hole mounting, providing a power dissipation capability of 83W when mounted properly (Tc). The device requires a gate-to-source voltage of either 4.5V or 10V for operation, featuring a threshold voltage of 2V at 40µA. The MOSFET has an input capacitance of approximately 2653 pF at 15 V, which influences its switching characteristics.
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