IPT015N10N5ATMA1N-Channel 100 V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1
1:$5.1980
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPT015-1039864
ManufacturerInfineon Technologies
MPN #.IPT015N10N5ATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
IPT015N10N5(PDF)
IPT015N10N5(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 5.1980
Ext. Price$ 5.1980
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.1980$5.1980
10$4.4550$44.5510
100$3.7130$371.3440
500$3.2760$1637.8440
1000$2.9480$2948.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPT015
Continuous Drain Current (ID) @ 25°C300A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)211 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)16000 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance1.5mOhm @ 150A, 10V
Package Type (Mfr.)PG-HSOF-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.8V @ 250µA
Package / Case8-PowerSFN
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Datasheets
Environmental Information
PCN Assembly/Origin
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPT015N10N5ATMA1 is a high-performance N-channel MOSFET designed by Infineon Technologies. It supports a drain-source voltage of 100V and a continuous drain current of 300A at a case temperature (Tc), making it suitable for handling substantial power loads up to 375W in a surface mount PG-HSOF-8-1 package. It features a low gate charge of 211 nC at 10V, which aids in efficient switching performance. The device exhibits an on-resistance of 1.5mOhm at 150A and 10V, ensuring minimal conduction losses, and a gate threshold voltage of 3.8V at 250μA, indicating the voltage required to initiate conduction.
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