IPS80R750P7AKMA1N-Channel 800 V 7A (Tc) 51W (Tc) Through Hole PG-TO251-3
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ABRmicro #.ABR2045-IPS80R-1018976
ManufacturerInfineon Technologies
MPN #.IPS80R750P7AKMA1
Estimated Lead Time-
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Datasheet
IPS80R750P(PDF)
IPS80R750P(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ P7
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPS80R750
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)460 pF @ 500 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation51W (Tc)
RDS(on) Drain-to-Source On Resistance750mOhm @ 2.7A, 10V
Package Type (Mfr.)PG-TO251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 140µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPS80R750P7AKMA1 is a semiconductor device manufactured by Infineon Technologies, specifically an N-Channel MOSFET. It is designed for high-voltage applications, with a maximum voltage rating of 800 volts and a continuous current capability of 7 amperes when used with proper thermal management. The device can dissipate up to 51 watts of power at its thermal limits. It features a threshold voltage of 3.5 volts at 140 microamperes and operates efficiently with a gate-source voltage of 10 volts. The MOSFET is encapsulated in a PG-TO251-3 package, which is suitable for through-hole mounting.
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