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IPS60R400CEAKMA1N-Channel 600 V 14.7A (Tj) 112W (Tc) Through Hole PG-TO251-3
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ABRmicro #.ABR2045-IPS60R-996255
ManufacturerInfineon Technologies
MPN #.IPS60R400CEAKMA1
Estimated Lead Time-
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DatasheetIPx60R400CE(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ CE
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPS60R400
Continuous Drain Current (ID) @ 25°C14.7A (Tj)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)700 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation112W (Tc)
RDS(on) Drain-to-Source On Resistance400mOhm @ 3.8A, 10V
Package Type (Mfr.)PG-TO251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 300µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPS60R400CEAKMA1 is an N-channel MOSFET manufactured by Infineon Technologies, designed for efficient power management in various electronic systems. It can handle a maximum voltage of 600 V and a continuous current of 14.7 A at junction temperature, while offering a power dissipation of 112 W at case temperature. This component comes in a PG-TO251-3 package suitable for through-hole mounting, ensuring stable physical connections in a circuit board. Its gate-source voltage tolerance is up to ±20 V, with a gate threshold voltage of 3.5 V at 300 µA, indicating the voltage required to allow current flow. The device also features an input capacitance of 700 pF at 100 V, impacting its switching characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.