IPS60R2K1CEAKMA1N-Channel 600 V 3.7A (Tj) 38W (Tc) Through Hole PG-TO251-3
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ABRmicro #.ABR2045-IPS60R-929045
ManufacturerInfineon Technologies
MPN #.IPS60R2K1CEAKMA1
Estimated Lead Time-
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Datasheet
IPS60R2K1CE(PDF)
IPS60R2K1CE(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPS60R2
Continuous Drain Current (ID) @ 25°C3.7A (Tj)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)140 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation38W (Tc)
RDS(on) Drain-to-Source On Resistance2.1Ohm @ 760mA, 10V
Package Type (Mfr.)PG-TO251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 60µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPS60R2K1CEAKMA1 by Infineon Technologies is an N-channel MOSFET designed for high voltage applications, featuring a 600 V drain-source breakdown voltage and a continuous drain current of 3.7 A at junction temperature (Tj). It delivers a power dissipation of up to 38 W at the case (Tc) and is optimized for through-hole mounting with a PG-TO251-3 package. The device operates with a gate threshold voltage range of ±20 V and exhibits an input capacitance of 140 pF at 100 V, alongside a total gate charge of 6.7 nC at 10 V, balancing between efficient switching performance and thermal management.
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