IPS13N03LA GN-Channel 25 V 30A (Tc) 46W (Tc) Through Hole PG-TO251-3-11
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ABRmicro #.ABR2045-IPS13N-951545
ManufacturerInfineon Technologies
MPN #.IPS13N03LA G
Estimated Lead Time-
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Datasheet
IPx13N03LA G(PDF)
IPx13N03LA G(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPS13N
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.3 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1043 pF @ 15 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation46W (Tc)
RDS(on) Drain-to-Source On Resistance12.8mOhm @ 30A, 10V
Package Type (Mfr.)PG-TO251-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 20µA
Package / CaseTO-251-3 Stub Leads, IPAK
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Datasheets
Environmental & Export Classifications
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPS13N03LA G, manufactured by Infineon Technologies, is a N-Channel MOSFET designed for use in power management and switching applications. It has a maximum drain-source voltage of 25V and can handle a current up to 30A when properly mounted to a heatsink (Tc). This component is housed in a PG-TO251-3-11 through-hole package, supporting efficient heat dissipation with a power rating of up to 46W (Tc). The gate-source threshold voltage is 2V at 20µA, making it compatible with standard logic level controls. It features a gate charge of 8.3 nC at 5 V and is operational with gate-source voltages of both 4.5V and 10V, allowing for flexibility in various circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.