IPS075N03LGAKMA1N-Channel 30 V 50A (Tc) 47W (Tc) Through Hole PG-TO251-3-11
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPS075-977888
ManufacturerInfineon Technologies
MPN #.IPS075N03LGAKMA1
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IPx075N03L G(PDF)
IPx075N03L G(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 15 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation47W (Tc)
RDS(on) Drain-to-Source On Resistance7.5mOhm @ 30A, 10V
Package Type (Mfr.)PG-TO251-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / CaseTO-251-3 Stub Leads, IPAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPS075N03LGAKMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, offering a maximum drain-source voltage of 30 volts and a continuous current of 50 amperes at the case temperature (Tc). With a power dissipation capacity of 47 watts (Tc), it is housed in a PG-TO251-3-11 through-hole package. The device features a gate-to-source voltage rating of ±20 volts and can operate effectively with gate drive voltages of 4.5 volts and 10 volts. It exhibits an input capacitance of 1900 pF at 15 volts, highlighting its suitability for efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.