IPP90N06S4L04AKSA1N-Channel 60 V 90A (Tc) 150W (Tc) Through Hole PG-TO220-3-1
N/A
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ABRmicro #.ABR2045-IPP90N-910305
ManufacturerInfineon Technologies
MPN #.IPP90N06S4L04AKSA1
Estimated Lead Time-
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Datasheet
IPx90N06S4L-04(PDF)
IPx90N06S4L-04(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 10, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP90N
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)13000 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance3.7mOhm @ 90A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 90µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)