IPP80P04P4L06AKSA1P-Channel 40 V 80A (Tc) 88W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-IPP80P-938797
ManufacturerInfineon Technologies
MPN #.IPP80P04P4L06AKSA1
Estimated Lead Time-
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Datasheet
IPx80P04P4L-06(PDF)
IPx80P04P4L-06(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP80P
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)104 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6580 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation88W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance6.7mOhm @ 80A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+5V, -16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 150µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP80P04P4L06AKSA1 is a P-Channel MOSFET manufactured by Infineon Technologies, featuring a voltage rating of 40 V and a current capability of 80A when cooled effectively (Tc). It is designed with a power dissipation capacity of 88W at similar conditions, housed in a robust PG-TO220-3-1 through-hole package. The device exhibits a total gate charge of 6580 pF at 25 V, indicative of its switching characteristics. Additionally, it operates with a threshold voltage of 2.2V at a leakage current of 150µA, making it suitable for automotive environments where reliability is critical.
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