IPP80N04S306AKSA1N-Channel 40 V 80A (Tc) 100W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-IPP80N-925890
ManufacturerInfineon Technologies
MPN #.IPP80N04S306AKSA1
Estimated Lead Time-
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Datasheet
IPx80N04S3-06(PDF)
IPx80N04S3-06(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)47 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3250 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation100W (Tc)
RDS(on) Drain-to-Source On Resistance5.7mOhm @ 80A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 52µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP80N04S306AKSA1 is an N-channel MOSFET manufactured by Infineon Technologies, designed for efficient power management in electronic circuits. It features a voltage rating of 40V and a current capacity of 80A under specified conditions, with a power dissipation of 100W when properly mounted in through-hole PG-TO220-3-1 packaging. This transistor functions optimally with a gate-source voltage of up to 10V and can handle a maximum gate-source voltage of ±20V. It enhances performance with a gate threshold voltage of 4V at a minor leakage current of 52µA, catering to robust and reliable electrical performance.
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