IPP80N04S3-04N-Channel 40 V 80A (Tc) 136W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-IPP80N-925695
ManufacturerInfineon Technologies
MPN #.IPP80N04S3-04
Estimated Lead Time-
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Datasheet
IPx80N04S3-04(PDF)
IPx80N04S3-04(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5200 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation136W (Tc)
RDS(on) Drain-to-Source On Resistance4.1mOhm @ 80A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 90µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP80N04S3-04 is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed to handle a maximum drain-source voltage of 40V and can conduct up to 80A of current when properly cooled. The device is housed in a PG-TO220-3-1 through-hole package, allowing for straightforward mounting and heat dissipation. It offers a low on-resistance of 4.1 milliohms when operating at 80A with a gate-source voltage of 10V, ensuring efficient performance with minimal power loss. The device also features an input capacitance of 5200 pF at 25V, enhancing its suitability for high-speed switching applications. With a power dissipation rating of 136W (under optimal thermal conditions), the IPP80N04S3-04 is suitable for various demanding electrical requirements.
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