IPP65R660CFDAAKSA1N-Channel 650 V 6A (Tc) 62.5W (Tc) Through Hole PG-TO220-3
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ABRmicro #.ABR2045-IPP65R-1000365
ManufacturerInfineon Technologies
MPN #.IPP65R660CFDAAKSA1
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Datasheet
IPx65R660CFDA(PDF)
IPx65R660CFDA(PDF)
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Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP65R
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)543 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation62.5W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance660mOhm @ 3.2A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 200µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP65R660CFDAAKSA1 is a high-voltage N-Channel MOSFET manufactured by Infineon Technologies. It is designed to handle up to 650 V and a continuous drain current of 6A when properly mounted, making it suitable for substantial power-handling requirements. This MOSFET is encapsulated in a PG-TO220-3 package, making it suitable for through-hole mounting. It features a gate charge of 20 nC at 10 V, which indicates its efficiency in switching applications. With a power dissipation capacity of 62.5W under specified conditions, this component is tailored to meet the rigorous demands of automotive applications.
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