IPP65R190CFDAAKSA1N-Channel 650 V 17.5A (Tc) 151W (Tc) Through Hole PG-TO220-3
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ABRmicro #.ABR2045-IPP65R-978077
ManufacturerInfineon Technologies
MPN #.IPP65R190CFDAAKSA1
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Datasheet
IPx65R190CFDA(PDF)
IPx65R190CFDA(PDF)
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Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP65R
Continuous Drain Current (ID) @ 25°C17.5A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)68 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1850 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation151W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance190mOhm @ 7.3A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 700µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP65R190CFDAAKSA1 is a robust N-Channel MOSFET manufactured by Infineon Technologies, designed for high-voltage applications with a maximum drain-source voltage of 650 V. It is capable of handling a continuous current of 17.5A at the case temperature (Tc) and dissipating power up to 151W, also measured at Tc. This component features a Through Hole PG-TO220-3 package, providing ease of integration into a variety of circuits. With an automotive-grade rating and a gate-source voltage threshold of ±20V, it ensures reliable performance in demanding environments.
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