IPP65R110CFDXKSA1N-Channel 700 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3
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ABRmicro #.ABR2045-IPP65R-905580
ManufacturerInfineon Technologies
MPN #.IPP65R110CFDXKSA1
Estimated Lead Time-
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Datasheet
IPx65R110CFD(PDF)
IPx65R110CFD(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 9, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP65R110
Continuous Drain Current (ID) @ 25°C31.2A (Tc)
Drain-to-Source Voltage (VDS)700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)118 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3240 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation277.8W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 12.7A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1.3mA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)