IPP60R750E6XKSA1N-Channel 600 V 5.7A (Tc) 48W (Tc) Through Hole PG-TO220-3
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ABRmicro #.ABR2045-IPP60R-935372
ManufacturerInfineon Technologies
MPN #.IPP60R750E6XKSA1
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Datasheet
IPx60R750E6(PDF)
IPx60R750E6(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP60R
Continuous Drain Current (ID) @ 25°C5.7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)373 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation48W (Tc)
RDS(on) Drain-to-Source On Resistance750mOhm @ 2A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 170µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP60R750E6XKSA1 is an N-channel MOSFET produced by Infineon Technologies, featuring a voltage rating of 600 V and a current handling capacity of 5.7 A (Tc). It is housed in a PG-TO220-3 package suitable for through-hole mounting. This MOSFET has a total power dissipation of 48 W (Tc), and it exhibits a gate charge of 17.2 nC at 10 V, making it efficient for switching applications. Its structural design focuses on providing reliable performance in electrical circuits, leveraging the typical features of metal oxide semiconductors to manage electrical loads efficiently.
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