IPP60R600P6XKSA1N-Channel 600 V 7.3A (Tc) 63W (Tc) Through Hole PG-TO220-3
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ABRmicro #.ABR2045-IPP60R-1033377
ManufacturerInfineon Technologies
MPN #.IPP60R600P6XKSA1
Estimated Lead Time-
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Datasheet
IPD60R600P6(PDF)
IPD60R600P6(PDF)
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Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ P6
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP60R
Continuous Drain Current (ID) @ 25°C7.3A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)557 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation63W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 2.4A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 200µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP60R600P6XKSA1 is a power transistor from Infineon Technologies, designed as an N-channel MOSFET. It operates at a maximum voltage of 600 V and a continuous current of 7.3 A under specific conditions (Tc). The transistor features a power dissipation capability of 63 W (Tc) and is encapsulated in a PG-TO220-3 through-hole package, making it suitable for various electronic circuits that require efficient power handling. Its on-resistance is specified at 600 milliohms when operating with a drain current of 2.4 A and a gate charge of 10 V, providing relatively low conduction losses. The gate-source voltage is rated at 10 V with a tolerance of ±20 V.
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