IPP60R330P6XKSA1N-Channel 600 V 12A (Tc) 93W (Tc) Through Hole PG-TO220-3
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ABRmicro #.ABR2045-IPP60R-951870
ManufacturerInfineon Technologies
MPN #.IPP60R330P6XKSA1
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Datasheet
IPx60R330P6(PDF)
IPx60R330P6(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ P6
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP60R
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1010 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation93W (Tc)
RDS(on) Drain-to-Source On Resistance330mOhm @ 4.5A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 370µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP60R330P6XKSA1 is a power MOSFET manufactured by Infineon Technologies. It features an N-Channel design with a voltage rating of 600 V and a current capacity of 12A when measured at the case temperature (Tc). The device can dissipate up to 93W of power under similar conditions and is housed in a PG-TO220-3 through-hole package. Key electrical characteristics include a total gate charge of 22 nanocoulombs at a gate-source voltage of 10V, and it exhibits a threshold voltage of 4.5V with a gate current of 370µA. This MOSFET is designed for efficient power management in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.