IPP60R060C7XKSA1N-Channel 600 V 35A (Tc) 162W (Tc) Through Hole PG-TO220-3
1:$5.4370
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPP60R-985211
ManufacturerInfineon Technologies
MPN #.IPP60R060C7XKSA1
Estimated Lead Time17 Weeks
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Datasheet
IPP60R060C7(PDF)
IPP60R060C7(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.4370
Ext. Price$ 5.4370
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.4370$5.4370
50$4.3370$216.8560
100$3.8800$388.0250
500$3.4240$1712.2190
1000$3.0820$3082.3130
2000$2.8880$5775.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ C7
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPP60R060
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)68 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2850 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation162W (Tc)
RDS(on) Drain-to-Source On Resistance60mOhm @ 15.9A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 800µA
Package / CaseTO-220-3
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP60R060C7XKSA1 is an N-channel power MOSFET manufactured by Infineon Technologies, designed for efficient switching and energy conversion. It operates with a maximum voltage of 600V and supports a current up to 35A under specified conditions. This component has a maximum power dissipation of 162W. With a low on-resistance of 60mOhm at a gate-source voltage of 10V and a current of 15.9A, it ensures minimal power loss during operation. The MOSFET is housed in a PG-TO220-3 through-hole package, enhancing its thermal management capabilities and providing reliable performance in various electronic systems. Additionally, it can handle gate voltages up to ±20V, showcasing its robustness against voltage fluctuations.
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