IPP50R280CEXKSA1N-Channel 500 V 13A (Tc) 92W (Tc) Through Hole PG-TO220-3-1
1:$1.2910
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ABRmicro #.ABR2045-IPP50R-1016234
ManufacturerInfineon Technologies
MPN #.IPP50R280CEXKSA1
Estimated Lead Time15 Weeks
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Datasheet
500V CoolMOS CE Brief(PDF)
500V CoolMOS CE Brief(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2910
Ext. Price$ 1.2910
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2910$1.2910
50$1.0350$51.7440
100$0.8200$82.0250
500$0.6950$347.4380
1000$0.5660$566.3130
2000$0.5320$1064.6250
5000$0.5080$2539.3750
10000$0.4850$4845.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPP50R280
Continuous Drain Current (ID) @ 25°C13A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))13V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)773 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation92W (Tc)
RDS(on) Drain-to-Source On Resistance280mOhm @ 4.2A, 13V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 350µA
Package / CaseTO-220-3
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Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP50R280CEXKSA1, manufactured by Infineon Technologies, is an N-Channel MOSFET designed for use in high voltage applications. It features a 500 V drain-source breakdown voltage and can handle a continuous current of up to 13 A at a case temperature of 25°C. Housed in a PG-TO220-3-1 through-hole package, this device can dissipate up to 92 W at the same temperature. It has a gate-source voltage rating of 13 V and requires a gate threshold voltage of 3.5 V with a gate current of 350 µA. This MOSFET is aimed at providing efficient performance with its robust design suitable for various high power tasks.
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