IPP50R250CPHKSA1N-Channel 500 V 13A (Tc) 114W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-IPP50R-1001731
ManufacturerInfineon Technologies
MPN #.IPP50R250CPHKSA1
Estimated Lead Time-
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Datasheet
IPP50R250CP(PDF)
IPP50R250CP(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP50R
Continuous Drain Current (ID) @ 25°C13A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1420 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation114W (Tc)
RDS(on) Drain-to-Source On Resistance250mOhm @ 7.8A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 520µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP50R250CPHKSA1 is a power MOSFET manufactured by Infineon Technologies, designed with a focus on efficiency and reliability. It is an N-channel device with a voltage rating of 500 V, capable of handling a current of 13A under specified conditions at a temperature-controlled environment (Tc). This MOSFET features a low on-state resistance of 250 mOhms at 7.8A and 10V, making it suitable for applications requiring efficient switching performance. Its package type is PG-TO220-3-1, supporting through-hole mounting for robust mechanical stability. Additionally, the IPP50R250CPHKSA1 MOSFET has a total gate charge of 36 nC at 10V, enabling rapid switching speeds beneficial for high-frequency applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.