IPP47N10SL26AKSA1N-Channel 100 V 47A (Tc) 175W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-IPP47N-950011
ManufacturerInfineon Technologies
MPN #.IPP47N10SL26AKSA1
Estimated Lead Time-
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Datasheet
IPx47N10SL-26(PDF)
IPx47N10SL-26(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP47N
Continuous Drain Current (ID) @ 25°C47A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)135 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2500 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation175W (Tc)
RDS(on) Drain-to-Source On Resistance26mOhm @ 33A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 2mA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP47N10SL26AKSA1 is an N-channel MOSFET manufactured by Infineon Technologies. It is designed to handle a drain-source voltage of up to 100 V and a continuous drain current of 47A under optimal conditions, characterized by a low on-resistance of 26mOhm at 33A and 10V gate-source voltage. This MOSFET is capable of dissipating up to 175 watts of power, featuring a robust, three-pin through-hole TO-220 package, which facilitates efficient heat dissipation and ease of integration into electronic circuits. The device supports gate-source voltage swings of ±20V, making it suitable for a range of power management tasks.
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