IPP120P04P4L03AKSA1P-Channel 40 V 120A (Tc) 136W (Tc) Through Hole PG-TO220-3-1
1:$1.9070
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ABRmicro #.ABR2045-IPP120-1009244
ManufacturerInfineon Technologies
MPN #.IPP120P04P4L03AKSA1
Estimated Lead Time12 Weeks
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Datasheet
IPx120P04P4L-03(PDF)
IPx120P04P4L-03(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.9070
Ext. Price$ 1.9070
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
500$1.9070$953.5940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPP120
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)234 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)15000 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation136W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance3.4mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 340µA
Package / CaseTO-220-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP120P04P4L03AKSA1 from Infineon Technologies is a P-Channel MOSFET designed for high-efficiency performance in automotive applications. It supports a maximum voltage of 40 volts and a continuous current of 120 amperes at Tc, while its power dissipation capacity reaches up to 136 watts under similar conditions. The device is housed in a PG-TO220-3-1 through-hole package, providing ease of mounting and reliable thermal performance. Additionally, the MOSFET features a gate-source voltage of ±16 volts, affirming its robustness and suitability for various demanding operational environments.
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