IPP120N10S403AKSA1N-Channel 100 V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-IPP120-929008
ManufacturerInfineon Technologies
MPN #.IPP120N10S403AKSA1
Estimated Lead Time-
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Datasheet
IPx120N10S4-03(PDF)
IPx120N10S4-03(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP120
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)140 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10120 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance3.9mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 180µA
Package / CaseTO-220-3
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP120N10S403AKSA1 is a power MOSFET manufactured by Infineon Technologies, designed as an N-Channel device. It supports a voltage rating of 100 V and a current rating of 120A when attached to a case (Tc), offering substantial power handling capability up to 250W at the case (Tc). Encased in a PG-TO220-3-1 through-hole package, this MOSFET features a low ON-resistance of 3.9mOhm at 100A and 10V, which contributes to efficient performance in power management. The device has a gate charge value of 10120 pF at 25 V, indicating its capacity to handle fast switching applications effectively.
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