IPP100N06S2L05AKSA2N-Channel 55 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
1:$2.3760
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ABRmicro #.ABR2045-IPP100-949589
ManufacturerInfineon Technologies
MPN #.IPP100N06S2L05AKSA2
Estimated Lead Time12 Weeks
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Datasheet
IPx100N06S2L-05(PDF)
IPx100N06S2L-05(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.3760
Ext. Price$ 2.3760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.3760$2.3760
10$1.9940$19.9430
100$1.6140$161.3940
500$1.5790$789.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPP100
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)230 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5660 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance4.7mOhm @ 80A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP100N06S2L05AKSA2 is a robust N-Channel MOSFET manufactured by Infineon Technologies, designed to handle voltage up to 55V and a continuous current of 100A under optimal conditions. Encased in a PG-TO220-3-1 package for through-hole mounting, this MOSFET offers reliable performance in high-power applications, withstanding up to 300W power dissipation. Featuring a low gate threshold voltage of 2V at 250µA and a gate charge of 230 nC at 10V, it ensures efficient operation with minimal power loss, making it a suitable choice for various electronic applications requiring efficient switching.
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