IPP100N04S303AKSA1N-Channel 40 V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-IPP100-1013911
ManufacturerInfineon Technologies
MPN #.IPP100N04S303AKSA1
Estimated Lead Time-
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Datasheet
IPx100N04S3-03(PDF)
IPx100N04S3-03(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP100
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)145 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9600 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation214W (Tc)
RDS(on) Drain-to-Source On Resistance2.8mOhm @ 80A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-220-3
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP100N04S303AKSA1 is a robust N-Channel MOSFET produced by Infineon Technologies, designed for handling high current and power applications. It is capable of managing up to 100A at a voltage of 40V and has a power dissipation capacity of 214W when mounted on the appropriate heat sink. Packaged in a standard TO-220-3 through-hole format, it is suitable for applications where efficient thermal management is necessary. The device features a total gate charge of 145 nC at a gate-to-source voltage of 10V, which facilitates swift switching performance. Its metal-oxide construction ensures durability and reliability in various electronic circuits.
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