IPP09N03LAN-Channel 25 V 50A (Tc) 63W (Tc) Through Hole PG-TO220-3
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ABRmicro #.ABR2045-IPP09N-941161
ManufacturerInfineon Technologies
MPN #.IPP09N03LA
Estimated Lead Time-
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Datasheet
IPI,IPP09N03LA(PDF)
IPI,IPP09N03LA(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP09N
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1642 pF @ 15 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation63W (Tc)
RDS(on) Drain-to-Source On Resistance9.2mOhm @ 30A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 20µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP09N03LA is a high-performance N-channel MOSFET manufactured by Infineon Technologies. This component is designed for efficient switching operations, providing a maximum drain-source voltage of 25V and a continuous drain current of 50A when adequately heat sunk (measured at the case). It offers a low on-resistance of 9.2 milliohms at 30A and a gate-source voltage of 10V, leading to minimized conduction losses. The device is capable of dissipating up to 63W of power at the case, and it features a maximum gate-source voltage tolerance of ±20V. It is constructed in a PG-TO220-3 through-hole package, allowing for robust physical connections and efficient thermal management.
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