IPP096N03L GN-Channel 30 V 35A (Tc) 42W (Tc) Through Hole PG-TO220-3
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ABRmicro #.ABR2045-IPP096-981769
ManufacturerInfineon Technologies
MPN #.IPP096N03L G
Estimated Lead Time-
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Datasheet
IP(B,P)096N03L G(PDF)
IP(B,P)096N03L G(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP096N
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1600 pF @ 15 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation42W (Tc)
RDS(on) Drain-to-Source On Resistance9.6mOhm @ 30A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP096N03L G, manufactured by Infineon Technologies, is an N-Channel MOSFET characterized by its capability to handle up to 35A of continuous current at a voltage rating of 30V. Packaged in a PG-TO220-3 through-hole casing, it is suitable for standard circuit board mounting. The component is designed to deliver efficient performance with a maximum power dissipation of 42W, catering to high-power applications. It operates effectively with gate-source voltages of 4.5V and 10V and features a low gate charge of 15 nC at 10V, promoting fast switching speed and reduced power losses.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.