IPP050N06N GN-Channel 60 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3
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ABRmicro #.ABR2045-IPP050-915188
ManufacturerInfineon Technologies
MPN #.IPP050N06N G
Estimated Lead Time-
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Datasheet
IPB,IPP050N06N G(PDF)
IPB,IPP050N06N G(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 10, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP050N
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)167 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6100 pF @ 30 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance5mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 270µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)