IPP03N03LB GN-Channel 30 V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-IPP03N-921477
ManufacturerInfineon Technologies
MPN #.IPP03N03LB G
Estimated Lead Time-
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Datasheet
IPP03N03LB G(PDF)
IPP03N03LB G(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP03N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)59 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7624 pF @ 15 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance3.1mOhm @ 55A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 100µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP03N03LB G is an N-Channel MOSFET produced by Infineon Technologies, designed to handle up to 30 volts and 80 amperes, with a total power dissipation capability of 150 watts in a through-hole PG-TO220-3-1 package. It features a low gate charge of 59 nC at 5 volts and a capacitance of 7624 pF at 15 volts, making it suitable for efficient switching operations. The device supports a gate-source voltage of up to ±20 volts, allowing for robust performance under various conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.