IPP039N10N5AKSA1N-Channel 100 V 100A (Tc) 188W (Tc) Through Hole PG-TO220-3-1
1:$2.3550
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ABRmicro #.ABR2045-IPP039-939581
ManufacturerInfineon Technologies
MPN #.IPP039N10N5AKSA1
Estimated Lead Time20 Weeks
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Datasheet
IPP039N10N5(PDF)
IPP039N10N5(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 2.3550
Ext. Price$ 2.3550
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$2.3550$117.7250
100$2.0190$201.8750
250$1.9070$476.7970
500$1.7950$897.2810
1250$1.5350$1919.1410
2500$1.4460$3615.1560
5000$1.3880$6938.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPP039
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)95 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7000 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation188W (Tc)
RDS(on) Drain-to-Source On Resistance3.9mOhm @ 50A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.8V @ 125µA
Package / CaseTO-220-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP039N10N5AKSA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed to manage high power loads with impressive efficiency. This component is rated for a maximum of 100 volts and can handle current loads up to 100 amperes when properly heat-sinked (at case temperature or Tc). It features a low on-resistance of 3.9 milliohms at a drain-source voltage of 10 volts and a current of 50 amperes, ensuring minimal power loss. Additionally, the MOSFET requires a gate threshold voltage of 3.8 volts at 125 microamperes for operation. The device can dissipate up to 188 watts of power at the case, making it suitable for use in demanding environments. Enclosed in a through-hole PG-TO220-3-1 package, it supports straightforward integration into various electronic assemblies.
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