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IPP037N08N3GHKSA1N-Channel 80 V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3

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ABRmicro #.ABR2045-IPP037-1033832
ManufacturerInfineon Technologies
MPN #.IPP037N08N3GHKSA1
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIPP037N08N3, IPI037N08N3, IPB035N08N3 G(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP037N
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)117 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8110 pF @ 40 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation214W (Tc)
RDS(on) Drain-to-Source On Resistance3.75mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 155µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IPP037N08N3, IPI037N08N3, IPB035N08N3 G
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP037N08N3GHKSA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high power applications. It operates at a maximum voltage of 80 volts, can handle a continuous drain current of up to 100 amperes when properly cooled (Tc), and dissipates power up to 214 watts (Tc). The part features a tolerance for gate-to-source voltages of ±20 volts and requires a threshold voltage of 6 to 10 volts for operation. Packaged in a PG-TO220-3 through-hole form factor, it offers reliable performance in robust circuit designs requiring efficient power management and control.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.