IPP028N08N3GXKSA1N-Channel 80 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3
1:$4.1650
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ABRmicro #.ABR2045-IPP028-962287
ManufacturerInfineon Technologies
MPN #.IPP028N08N3GXKSA1
Estimated Lead Time18 Weeks
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Datasheet
IPP,IPI028N08N3 G(PDF)
IPP,IPI028N08N3 G(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.1650
Ext. Price$ 4.1650
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$4.1650$208.2500
100$3.5700$357.0000
250$3.3720$843.0940
500$3.1740$1586.8440
1250$2.7180$3397.3440
2500$2.5590$6396.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPP028
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)206 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14200 pF @ 40 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance2.8mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 270µA
Package / CaseTO-220-3
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP028N08N3GXKSA1 is a robust N-channel MOSFET manufactured by Infineon Technologies, designed to handle high-power applications with its considerable specifications. This component can withstand a drain-to-source voltage of up to 80V and a current of 100A under specified conditions, making it suitable for demanding environments. Housed in a PG-TO220-3 package, it boasts a power dissipation capability of 300W, ensuring efficient thermal management. The MOSFET features a low on-resistance of 2.8 mOhm at 100A, 10V, and a gate charge of 206 nC at 10V, indicating its proficiency in switching applications. Additionally, it has a capacitance of 14200 pF at 40V, contributing to its overall performance in various electrical circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.