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IPP024N06N3GHKSA1N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3

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ABRmicro #.ABR2045-IPP024-1015853
ManufacturerInfineon Technologies
MPN #.IPP024N06N3GHKSA1
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIPB021N06N3, IPI024N06N3, IPP024N06N3 G(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPP024N
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)275 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)23000 pF @ 30 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance2.4mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 196µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IPB021N06N3, IPI024N06N3, IPP024N06N3 G
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPP024N06N3GHKSA1 is an N-Channel MOSFET produced by Infineon Technologies, designed for high efficiency and performance in power management applications. It can handle a continuous drain current of up to 120 amperes at a case temperature, with a power dissipation of 250 watts. This MOSFET operates with a drain-source voltage rating of 60 volts and features an extremely low on-state resistance of 2.4 milliohms at 100A and 10V, ensuring minimal energy loss during operation. Housed in a robust PG-TO220-3 package for through-hole mounting, it also highlights a gate-source charge of 23000 picofarads at 30 volts, with a threshold voltage of 4 volts at 196 microamperes.
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