IPLU300N04S4R7XTMA2N-Channel 40 V 300A (Tc) 429W (Tc) Surface Mount PG-HSOF-8-1
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ABRmicro #.ABR2045-IPLU30-981913
ManufacturerInfineon Technologies
MPN #.IPLU300N04S4R7XTMA2
Estimated Lead Time-
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPLU300N
Continuous Drain Current (ID) @ 25°C300A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)287 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)22945 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation429W (Tc)
RDS(on) Drain-to-Source On Resistance0.76mOhm @ 100A, 10V
Package Type (Mfr.)PG-HSOF-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 230µA
Package / Case8-PowerSFN
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info@Abrmicro.com Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPLU300N04S4R7XTMA2 is an N-channel MOSFET manufactured by Infineon Technologies. It is designed to handle a maximum voltage of 40V and a continuous current of up to 300A when properly mounted on a suitable heatsink surface. The device offers a low on-resistance of 0.76 milliohms at 100A and 10V, ensuring efficient performance with minimal power loss. The MOSFET comes in a PG-HSOF-8-1 surface-mount package, with a power dissipation capacity rated at 429W when attached to a sufficiently cooled surface. The gate-source voltage threshold is ±20V, with a typical operating gate voltage of 10V.
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