IPL65R210CFDAUMA2N-Channel 650 V 16.6A (Tc) 151W (Tc) Surface Mount PG-VSON-4
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPL65R-921272
ManufacturerInfineon Technologies
MPN #.IPL65R210CFDAUMA2
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IPL65R210CFD(PDF)
IPL65R210CFD(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ CFD2
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPL65R210
Continuous Drain Current (ID) @ 25°C16.6A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)68 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1850 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation151W (Tc)
RDS(on) Drain-to-Source On Resistance210mOhm @ 7.3A, 10V
Package Type (Mfr.)PG-VSON-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 700µA
Package / Case4-PowerTSFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level2a (4 Weeks, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPL65R210CFDAUMA2 is a robust N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient performance in high-voltage applications with a voltage rating of 650V and a current capacity of 16.6A at the case temperature (Tc). It offers a power dissipation level of 151W at Tc, making it suitable for demanding thermal environments. Encased in a PG-VSON-4 surface-mount package, this component provides a compact and effective solution for circuit integration. It features a gate-source voltage of 4.5V at 700µA, and a gate threshold voltage of 10V, ensuring reliable switching characteristics essential for its operational purposes.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.