IPL65R1K5C6SATMA1N-Channel 650 V 3A (Tc) 26.6W (Tc) Surface Mount PG-TSON-8-2
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ABRmicro #.ABR2045-IPL65R-1001597
ManufacturerInfineon Technologies
MPN #.IPL65R1K5C6SATMA1
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Datasheet
IPL65R1K5C6S(PDF)
IPL65R1K5C6S(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ C6
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPL65R1
Continuous Drain Current (ID) @ 25°C3A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)225 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation26.6W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 1A, 10V
Package Type (Mfr.)PG-TSON-8-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 100µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPL65R1K5C6SATMA1 is an N-channel MOSFET manufactured by Infineon Technologies, designed for high-efficiency power management applications. It features a maximum voltage rating of 650 V and a current handling capability of 3A when operating at optimal thermal conditions (Tc). This component is encapsulated in a compact PG-TSON-8-2 surface mount package, making it suitable for space-restricted environments. The MOSFET exhibits an on-resistance of 1.5 Ohms at a drain current of 1A and a gate-source voltage of 10V, with a gate threshold voltage of 3.5V at 100µA. Additionally, it is capable of dissipating up to 26.6W of power at the case temperature, contributing to its effectiveness in power conversion and switching tasks.
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