IPL65R195C7AUMA1N-Channel 650 V 12A (Tc) 75W (Tc) Surface Mount PG-VSON-4
1:$2.3420
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ABRmicro #.ABR2045-IPL65R-952748
ManufacturerInfineon Technologies
MPN #.IPL65R195C7AUMA1
Estimated Lead Time17 Weeks
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Datasheet
IPL65R195C7(PDF)
IPL65R195C7(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.3420
Ext. Price$ 2.3420
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.3420$2.3420
10$1.9680$19.6780
100$1.5920$159.1630
500$1.4150$707.6250
1000$1.2110$1211.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ C7
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPL65R
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1150 pF @ 400 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance195mOhm @ 2.9A, 10V
Package Type (Mfr.)PG-VSON-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 290µA
Package / Case4-PowerTSFN
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level2a (4 Weeks, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPL65R195C7AUMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-voltage applications. It operates with a drain-source voltage of 650 V and can handle a continuous current of 12A at a 25°C case temperature, with a maximum power dissipation of 75W under the same conditions. It is housed in a compact PG-VSON-4 surface mount package, ideal for saving space on circuit boards. The MOSFET displays a capacitance of 1150 pF at 400 V, and is designed to be driven with a gate-source voltage of 10 V, which aids in efficient switching performance.
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