IPL65R190E6AUMA1N-Channel 650 V 20.2A (Tc) 151W (Tc) Surface Mount PG-VSON-4
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ABRmicro #.ABR2045-IPL65R-965497
ManufacturerInfineon Technologies
MPN #.IPL65R190E6AUMA1
Estimated Lead Time-
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Datasheet
IPL65R190E6(PDF)
IPL65R190E6(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ E6
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPL65R
Continuous Drain Current (ID) @ 25°C20.2A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)73 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1620 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation151W (Tc)
RDS(on) Drain-to-Source On Resistance190mOhm @ 7.3A, 10V
Package Type (Mfr.)PG-VSON-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 700µA
Package / Case4-PowerTSFN
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Datasheets
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Environmental & Export Classifications
MSL Level2a (4 Weeks, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPL65R190E6AUMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for use in high-voltage applications. It supports a maximum drain-source voltage of 650 V and can handle continuous currents up to 20.2 A, with a power dissipation of 151 W, making it suitable for demanding environments. This MOSFET is encapsulated in a PG-VSON-4 surface mount package, ensuring efficient thermal performance and compact integration on circuit boards. It features a capacitance of 1620 pF at 100 V and requires a gate-source voltage of 10 V for optimal operation, characterized by its robust metal oxide semiconductor structure.
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