IPI90N04S402AKSA1N-Channel 40 V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3
1:$1.7520
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ABRmicro #.ABR2045-IPI90N-956888
ManufacturerInfineon Technologies
MPN #.IPI90N04S402AKSA1
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
IPx90N04S4-02(PDF)
IPx90N04S4-02(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.7520
Ext. Price$ 1.7520
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7520$1.7520
50$1.3880$69.3810
100$1.1900$119.0000
500$1.1630$581.7190
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPI90N04
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)118 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9430 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance2.5mOhm @ 90A, 10V
Package Type (Mfr.)PG-TO262-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 95µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPI90N04S402AKSA1 is an N-Channel MOSFET manufactured by Infineon Technologies. It features a voltage rating of 40V and a current capacity of 90A (Tc), with a power dissipation of 150W (Tc). Housed in a PG-TO262-3 through-hole package, this MOSFET is designed to withstand gate-source voltages up to ±20V and operates effectively with a gate threshold voltage of 10V. Its construction utilizing metal oxide technology ensures reliable performance in controlling electrical power and managing high current loads within its specified ratings.
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