IPI80N06S2L11AKSA1N-Channel 55 V 80A (Tc) 158W (Tc) Through Hole PG-TO262-3
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ABRmicro #.ABR2045-IPI80N-1022450
ManufacturerInfineon Technologies
MPN #.IPI80N06S2L11AKSA1
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Datasheet
IPx80N06S2L-11(PDF)
IPx80N06S2L-11(PDF)
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Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIPI80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2075 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation158W (Tc)
RDS(on) Drain-to-Source On Resistance11mOhm @ 60A, 10V
Package Type (Mfr.)PG-TO262-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 93µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPI80N06S2L11AKSA1 is a robust N-Channel MOSFET manufactured by Infineon Technologies designed for efficient power management. It supports a drain-source voltage of up to 55 V and can handle a continuous current of 80A with a power dissipation of 158W when properly mounted to a heatsink. This MOSFET is housed in a PG-TO262-3 through-hole package, facilitating easy integration into various circuits. It features a gate threshold voltage of 10V, with a maximum drain-source on-state resistance of 11mOhm at a current of 60A and gate voltage of 10V, making it effective for high-power applications.
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