IPI70R950CEXKSA1N-Channel 700 V 7.4A (Tc) 68W (Tc) Through Hole PG-TO262-3-1
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ABRmicro #.ABR2045-IPI70R-997658
ManufacturerInfineon Technologies
MPN #.IPI70R950CEXKSA1
Estimated Lead Time-
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Datasheet
IPx70R950CE(PDF)
IPx70R950CE(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ CE
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPI70R950
Continuous Drain Current (ID) @ 25°C7.4A (Tc)
Drain-to-Source Voltage (VDS)700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)328 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation68W (Tc)
RDS(on) Drain-to-Source On Resistance950mOhm @ 1.5A, 10V
Package Type (Mfr.)PG-TO262-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 150µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part IPI70R950CEXKSA1 from Infineon Technologies is a discrete N-channel MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 700 V and can carry a current of 7.4A when mounted on a suitable heatsink. With a power dissipation of 68W under similar conditions, it is housed in a PG-TO262-3-1 through-hole package. The device exhibits an on-resistance of 950mOhm at 1.5A current and 10V gate-source voltage, ensuring efficient operation. Additionally, it has an input capacitance of 328 pF when tested at 100 V, which suggests moderate input capacitance characteristics necessary for various switching tasks.
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